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| UTC 2SB647 SILICON PNP EPITAXIAL APPLICATION * Low frequency power amplifier PNP EPITAXIAL SILICON TRANSISTOR 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Ic(peak) Pc Tj Tstg VALUE -120 -80 -5 -1 -2 0.9 150 -55 ~ +150 UNIT V V V A A W C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain Bandwidth Product Collector Output Capacitance Note: Pulse test SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE1 hFE2 VCE(sat) VBE fT Cob TEST CONDITIONS Ic= -10A,IE =0 Ic= -1mA,RBE = IE= -10A,IC=0 VCB= -100V,IE=0 VCE= -5V, Ic= -150mA(note) VCE= -5V, Ic= -500mA(note) Ic= -500mA,IB= -50 mA(note) VCE= -5V,Ic= -150mA(note) VCE= -5V,Ic= -150mA VCB= -10V,IE=0,f=1MHz MIN -120 -80 -5 60 30 TYP MAX UNIT V V V -10 320 -1 -1.5 A 140 20 V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R211-010,A UTC 2SB647 CLASSIFICATION OF hFE1 RANK RANGE PNP EPITAXIAL SILICON TRANSISTOR B 60-120 C 100-200 D 160-320 TYPICAL PERFORMANCE CHARACTERISTICS Maximum Collector Dissipation Curve 1.2 -1.0 -120 -100 Collector Power Dissipation Pc (W) -0.8 0.8 Collector Current Ic (A) -80 Typical Output Characteristics IB =0 -60 -40 -0.6 -30 -20 -10 -5 -2 -1 -0.2 -0.5m A Pc =0.9W -0.4 0.4 0 50 100 150 0 -2 -4 -6 -8 -10 Ambient Temperature Ta () Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics -500 VCE =-5V PULSE -200 DC Current Transfer Ratio hFE -100 Collector Current Ic (mA) -50 Ta=75 Ta=25 -20 -10 500 600 DC Current Transfer Ratio vs.Collector Current VCE =-5V PULSE 400 Ta=75 300 Ta=25 200 -5 Ta= -25 100 Ta=-25 0 -2 -1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1 -3 -10 -30 -100 -300 -1000 Base to Emitter Voltage VBE (V) Collector Current Ic (mA) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R211-010,A UTC 2SB647 -0.6 Collector to emitter saturation voltage V (sat) (V) CE PNP EPITAXIAL SILICON TRANSISTOR Saturation Voltage vs.Collector Current -1.2 Ic =10 IB PULSE Base to emitter saturation voltage V (sat) (V) BE -0.5 -1.0 Ta=-25 -0.8 VBE(sat) -0.4 -0.3 -0.6 Ta=25 -0.4 Ta=75 -0.2 VCE(sat) 0 Ta=25 -1 -3 -10 -30 -100 Ta=-25 -300 -1000 Ta=75 -0.2 -0.1 0 Collector Current Ic (mA) Gain Bandwidth Product vs.Colllector Current 240 VCE =-5V 200 Gain Bandwidth Product fT (MHz) 100 Collector Output Capacitance Cob (pF) 200 Collector Output Capacitance vs.Collector to Base Voltage f= 1 MHz IE =0 160 50 120 20 10 80 40 5 0 -10 -30 -100 Collector Current Ic (mA) -300 -1000 2 -1 -2 -5 -10 -20 -50 -100 Collector to Base Voltage VCB (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R211-010,A |
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